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| savantic semiconductor product specification silicon npn power transistors 2N6533 description with to-220 package darlington high dc current gain applications power switching hammer drivers series and shunt regulators audio amplifiers pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 120 v v ceo collector-emitter voltage open base 120 v v ebo emitter-base voltage open collector 5 v i c collector current 8 a i cm collector current-peak 15 a i b base current 0.25 a p t total power dissipation t c =25 65 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter value unit r 9 jc thermal resistance junction to case 1.92 /w fig.1 simplified outline (to-220) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2N6533 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.2a ; i b =0 120 v v cesat-1 collector-emitter saturation voltage i c =3a ;i b =6ma 2.0 v v cesat-2 collector-emitter saturation voltage i c =8a; i b =80ma 3.0 v v be-1 base -emitter on voltage i c =3a ; v ce =3v 2.8 v v be-2 base -emitter on voltage i c =8a ; v ce =3v 4.5 v i cev collector cut-off current v ce =120v; v be =-1.5v t c =125 0.5 5.0 ma i ceo collector cut-off current v ce =120v; i b =0 1.0 ma i ebo emitter cut-off current v eb =5v; i c =0 5.0 ma h fe-1 dc current gain i c =3a ; v ce =3v 1000 10000 h fe-2 dc current gain i c =8a ; v ce =3v 100 5000 v f diode forward voltage i f =5a 4.0 v savantic semiconductor product specification 3 silicon npn power transistors 2N6533 package outline fig.2 outline dimensions(unindicated tolerance: 0.10 mm) |
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